Impact of in situ carbon doping on implant damage and strain relaxation of epitaxial silicon germanium layer on silicon

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  Liu, J P ^a   Domenicucci, A ^b   Madan, A ^b   Li, J ^b   Holt, J ^b   Sudijono, John ^a  

^a Chartered Semiconductor Manufacturing   (Singapore)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT BANDS; IMPLANT DAMAGE; STRAIN RELAXATION;

DOPING (ADDITIVES); EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS;

CARBON;

EID: 33646148473     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2194893     Document Type: Article

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