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Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4169-4171

Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

(6) Tan, Chung Foong a Chor, Eng Fong a Liu, Jinping b Lee, Hyeokiae b Quek, Elgin b Chan, Lap b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b TD Chartered Semiconductor Manufacturing (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DEFECTS; DIFFUSION; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; INDIUM; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

END OF RANGE DEFECTS; SILICON EPITAXY; SILICON INTERSTITIALS; SUBSTITUTIONAL CARBON; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0346780494 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1628814 Document Type: Article

Times cited : (11)

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