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2005 International Conference on Communications, Circuits and Systems - Proceedings
Volumn 2, Issue , 2005, Pages 1403-1406
A novel E-simox SOI high voltage device structure with shielding trench
Author keywords

[No Author keywords available]
Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; INTERFACES (MATERIALS); OXIDES; PARAMETER ESTIMATION;
EID: 29844455562     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)
References (8)
  • 2
    • 15944403907 scopus 로고    scopus 로고
    • An analytical breakdown model of high voltage SOI devices considering the modulation of Step buried-oxide interface charges
    • BeiJing, China, Oct, 18-21
    • Yufeng Guo, Zhaoji Li, Bo Zhang, Jian Fang, "An Analytical Breakdown Model of High Voltage SOI Devices Considering the modulation of Step Buried-Oxide Interface Charges", ICSICT, BeiJing, China, pp.357-360, Oct, 18-21, 2004.
    • (2004) ICSICT , pp. 357-360
    • Guo, Y.1    Li, Z.2    Zhang, B.3    Fang, J.4
  • 3
    • 0026188097 scopus 로고
    • Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film
    • A. Nakagawa, N. Yasuhara, Y. Baba, "Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film", IEEE Tran. Electron Devices, Vol.38, No.7, pp.1650-1654, 1991
    • (1991) IEEE Tran. Electron Devices , vol.38 , Issue.7 , pp. 1650-1654
    • Nakagawa, A.1    Yasuhara, N.2    Baba, Y.3
  • 4
    • 0031630841 scopus 로고    scopus 로고
    • New 1200V MOSFET structure on SOI with SIPOS shielding layer
    • Kyoto, Japan, Jun.3-6
    • Hideyuki Funaki, Yoshihiro Yamaguchi, Keizo Hirayama, et al, "New 1200V MOSFET Structure on SOI with SIPOS Shielding Layer", Proceeding of ISPSD, Kyoto, Japan, pp.26-28, Jun.3-6,1998
    • (1998) Proceeding of ISPSD , pp. 26-28
    • Funaki, H.1    Yamaguchi, Y.2    Hirayama, K.3
  • 5
    • 0034447763 scopus 로고    scopus 로고
    • Dielectric charge traps: A new structure element for power devices
    • Roulouse, France, May 22-25
    • H. K.apels, R. Plikat,D. Silber, "Dielectric charge traps: a new structure element for power devices, Proceeding of ISPSD, pp.205-208, Roulouse, France, May 22-25, 2000.
    • (2000) Proceeding of ISPSD , pp. 205-208
    • Apels, H.K.1    Plikat, R.2    Silber, D.3
  • 6
    • 0032686879 scopus 로고    scopus 로고
    • Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
    • S. D. Zhang, Johnny K. O. Sin, Tommy M. L. Lai, et al. "Numerical Modeling of Linear Doping Profiles for High-voltage Thin-film SOI Devices", IEEE Transactions on Electron Devices, Vol. 46, No.5, 1036,1999
    • (1999) IEEE Transactions on Electron Devices , vol.46 , Issue.5 , pp. 1036
    • Zhang, S.D.1    Sin, J.K.O.2    Lai, T.M.L.3
  • 7
    • 84976333454 scopus 로고    scopus 로고
    • Breakdown theory of a new SOI composite structure
    • ChengDu, China
    • Zhaoji Li, Luyang Luo, Yu feng Guo, et al. "Breakdown Theory of a New SOI Composite Structure", ICCCAS, ChengDu, China, pp. 1744-1747, 2002
    • (2002) ICCCAS , pp. 1744-1747
    • Li, Z.1    Luo, L.2    Guo, Y.F.3

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.