Ge dot array formation using small convex position anchors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 B, 2004, Pages 3822-3824

  Kitayama, Daisuke ^a   Yoshizawa, Taichi ^a   Suda, Yoshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Dot; Ge; Light emitting devices; Migration; Nanoelectronic devices; Patterned structures

Indexed keywords

LIGHT-EMITTING DEVICES; MIGRATION; NANOELECTRONIC DEVICES; PATTERNED STRUCTURES;

ARRAYS; GERMANIUM; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; SEMICONDUCTOR GROWTH; SILICON; THERMAL EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4444355125     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3822     Document Type: Conference Paper

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