Self-assembled Germanium-dot multilayers embedded in Silicon

Crystal Research and Technology

Volumn 34, Issue 2, 1999, Pages 197-209

  Bauer, Guenther ^a   Darhuber, Anton A ^a   Holy V ^a,b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MASARYK UNIVERSITY   (Czech Republic)

Author keywords

Ge islands; Inhomogeneous strain fields; Low dimensional structures; Stranski Krastanow growth; X ray diffraction; X ray reflectivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ELECTROMAGNETIC WAVE REFLECTION; FILM GROWTH; MULTILAYERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

STRANSKI-KRASTANOW GROWTH; X RAY REFLECTIVITY ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0032759544     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4079(199902)34:2<197::AID-CRAT197>3.0.CO;2-A     Document Type: Article

References (43)

1. ABSTREITER G., SCHITTENHELM P., ENGEL C., SILVEIRA E., ZRENNER A., MEERTENS D., JÄGER W., Semicond. Sci. Technol. 11 (1996)1521.
2. ALONSO M. I., WISSER K., Phys. Rev. B 39 (1989)10056.
3. APETZ R., VESCAN L., HARTMANN A., DIEKER C., LÜTH H., Appl. Phys. Lett. 66 (1995) 445.
4. BARIBEAU J.-M., J. Cryst. Growth 157 (1995) 52.
5. BAUMBACH G. T., TIXIER S., PIETSCH U., HOLY V., Phys. Rev. B 51, (1995)16848.
6. BRUNNER K., WINTER W., EBERL K., Appl. Phys. Lett. 69, (1996) 1279.
7. CHRISTIANSEN, M. ALBRECHT, H.P. STRUNK, Appl.Phys.Lett. 64, 3617 (1994); Appl.Phys.Lett. 66, 574 (1995).
8. CHRISTIANSEN, M. ALBRECHT, H.P. STRUNK, Appl.Phys.Lett. 64, 3617 (1994); Appl.Phys.Lett. 66, 574 (1995).
9. CHEN H., XIE X. G., CHENG W. Q., HUANG Q., ZHOU J. M., Appl. Phys. Lett. 71 (1997)1555 ; Appl. Phys. Lett. 70 (1997) 446.
10. CHEN H., XIE X. G., CHENG W. Q., HUANG Q., ZHOU J. M., Appl. Phys. Lett. 71 (1997)1555 ; Appl. Phys. Lett. 70 (1997) 446.
11. CERDEIRA F., PINCZUK A., BEAN J. C., BATLOGG B., WILSON B. A., Appl. Phys. Lett. 45 (1984) 1138.
12. DARHUBER A. A., SCHITTENHELM P., HOLÝ V., STANGL J., BAUER G., ABSTREITER G., Phys. Rev. B55 (1997)15652.
13. DARHUBER A.A., HOLÝ V., SCHITTENHELM P., STANGL J., KEGEL I., KOVATS Z., METZGER T.H., BAUER G., ABSTREITER G., GRÜBEL G., Physica E, 2 (1998) 789.
14. EAGLESHAM D. J., CERULLO M., Phys. Rev. Lett. 64, (1990). 1943.
15. EBERL K., WEGSCHEIDER W., Handbook of Semiconductors Vol. 3a p.595, ed. P. S. Moss, Elsevier Science, Amsterdam 1994.
16. EBERL K., Semiconductors and Semimetals Vol. 44, ed. D. J. Lockwood Academic Press, San Diego 1998, in print.
17. FUKATSU S., SUNAMURA H., SHIRAKI Y., KOMIYAMA S., Appl. Phys. Lett. 71, (1997) 258.
18. HOLY V., BAUMBACH T., Phys. Rev. B 49 (1994) 10668.
19. KAMINS T.I., CARR E.C., WILLIAMS R.S., ROSNER S., J. Appl. Phys. 81 (1997)211.
20. KEGEL I., METZGER T.H., FRATZL P., PEISL J., LORKE A., KOTTHAUS J.P., PETROFF P.M., submitted.
21. KOSOGOV A. O., WERNER P., GÖSELE U., LEDENTSOV N. N., BIMBERG D., USTINOV V. M., EGOROV A. YU., ZHUKOV A. E., KOP'EV P. S., BERT N. A., ALFEROV ZH. I., Appl. Phys. Lett. 69 (1996)3072.
22. N. N. LEDENTSOV, Proc. of the 8th Int. Conf. on the Physics of Narrow Gap Semiconductors (Shanghai, 1997), World Scientific,Singapore 1998, pp. 419.
23. LIU F., LAGALLY M. G., Surf. Sci. 386 (1997). 169
24. MATEEVA E., SUTTER P., BEAN J. C., LAGALLY M. G., Appl. Phys. Lett. 71, (1997) 3233.
25. MEDEIROS-RIBEIRO G., BRATKOVSKI A.M., KAMINS T.I., OHLBERG D.A.A., STANLEY WILLIAMS R., Science 279 (1998)354.
26. MO Y.-W., SAVAGE D. E., SWARTZENTRUBER B. S., LAGALLY M. G., Phys. Rev. Lett. 65, (1990)1020.
27. PERSANS P. D., DEELMAN P. W., STOKES K. L., SCHOWALTER L. J., BYRNE A., THUNDAT T., Appl. Phys. Lett. 70 (1997)472.
28. PIETSCH U., METZGER H., RUGEL S., JENICHEN B., ROBINSON I. K., J. Appl. Phys. 74, (1993)2381.
29. RUVIMOV S., SCHEERSCHMIDT K., phys. stat. sol. (a) 150, (1995) 471.
30. SCHITTENHELM P., GAIL M., BRUNNER J., NÜTZEL J. F., ABSTREITER G., Appl. Phys. Lett. 67 (1995)1292.
31. SCHITTENHELM P., ABSTREITER G., DARHUBER A., BAUER G., WERNER P., KOSOGOV A., Thin Solid Films 294 (1997)295.
32. SCHITTENHELM P., PhD thesis, Walter Schottky Institut, Technical University Munich (1997a).
33. SCHMIDT O. G., LANGE C., EBERL K., KIENZLE O., ERNST F., Appl. Phys. Lett. 71 (1997) 2340.
34. SEAL C. K., SAMARA D., BANERJEE S. K., Appl. Phys. Lett. 71 (1997) 3564.
35. SUNAMURA H., USAMI N., SHIRAKI Y., FUKATSU S., Appl. Phys. Lett. 66 (1995) 3024.
36. STEINFORT A. J., SCHOLTE P. M., ETTEMA A., TUINSTRA F., NIELSEN M., LANDEMARK E., SMILGIES D.-M., FEIDENHANS'L R., FALKENBERG G., SEEHOFER L., JOHNSON R. L., Phys. Rev. Lett. 77, (1996) 2009.
37. TEICHERT C., LAGALLY M. G., PETICOLAS L. J., BEAN J. C., TERSOFF J., Phys. Rev. B 53 (1996) 16334.
38. TEICHERT C., PHANG Y. H., PETICOLAS L. J., BEAN J. C., LAGALLY M. G., Surface Diffusion: Atomistic and Collective Processes, Ed.: M. C. Tringides, NATO ASI Series, Plenum Press (1997).
39. TERSOFF J., TEICHERT C., LAGALLY M. G., Phys. Rev. Lett. 76, (1996) 1675.
40. THEISS S. K., CHEN D. M., GOLOVCHENKO J. A., Appl. Phys. Lett. 66 (1995) 448.
41. VOIGTLÄNDER B., ZINNER A., Appl. Phys. Lett. 63 (1994) 3055.
42. WILLIAMS A. A., THORNTON J. M. C., MACDONALD J. E., VAN SIFHOUT R. G., VAN DER VEEN J. F. , FINNEY M. S., JOHNSON A. D., NORRIS C., Phys. Rev. B 43 (1991) 5001.
43. XIE Q., MADHUKAR A., CHEN P., KOBAYASHI N. P., Phys. Rev. Lett. 75 (1995) 2542.