Hysteresis behavior in 85-nm channel length vertical n-MOSFET's grown by MBE

IEEE Transactions on Electron Devices

Volumn 43, Issue 6, 1996, Pages 973-976

  Ramgopal Rao, V ^a   Wittmann, Franz ^a   Gossner, Harald ^a   Eisele, Ignaz ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; HYSTERESIS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE CONTROL;

CHANNEL LENGTHS; DRAIN CURRENT; ELECTRON INJECTION; FORWARD BIASING; SOURCE CHANNEL JUNCTIONS;

MOSFET DEVICES;

EID: 0030170054     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502132     Document Type: Article

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