Scaling of vertical and lateral MOSFETs in the deep submicrometer range

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Volumn , Issue , 2000, Pages

  Kittler, M ^a   Schwierz, F ^a   Schipanski, D ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSCONDUCTANCE;

DEEP SUBMICROMETER RANGE; PLANAR DOPED BARRIER FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0033683317     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)