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Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 39-44

A survey of defects in strained Si layers

(5) Bedell, S W a Chen, H b Sadana, D K a Fogel, K a Domenicucci, A b

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM MICROELECTRONICS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; CRYSTAL DEFECTS; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; ETCHING; INTERFACES (MATERIALS); OPTICAL MICROSCOPY; SEMICONDUCTING GERMANIUM; SOLUTIONS; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL ETCHING; PLANAR DEFECTS; SILICON GERMANIUM-ON-INSULATOR SUBSTRATES (SGOI); THREADING DISLOCATIONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 12744250308 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-809-b1.5 Document Type: Conference Paper

Times cited : (14)

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