Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 124-127

  Umirzakov, B E ^a   Tashmukhamedova, D A ^a   Boltaev, E U ^a   Dzhurakhalov, A A ^b  

^a TASHKENT STATE TECHNICAL UNIVERSITY   (Uzbekistan)

^b ARIFOV INSTITUTE OF ELECTRONICS   (Uzbekistan)

Author keywords

Electron and crystalline structure; Ion implantation and molecular beam epitaxy; Silicides of metals; Thin epitaxial films

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; COMPOSITION; CRYSTAL STRUCTURE; HETEROJUNCTIONS; HIGH TEMPERATURE APPLICATIONS; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; THIN FILMS; ULTRAVIOLET SPECTROSCOPY;

ELECTRON STRUCTURE; SILICIDES OF METALS; THIN EPITAXIAL FILMS;

SILICON COMPOUNDS;

EID: 1642337040     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00677-3     Document Type: Conference Paper

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