SiGe p-channel MOSFETs with tungsten gate

Electronics Letters

Volumn 35, Issue 5, 1999, Pages 430-431

  Ternent, G ^a   Asenov, A ^a   Thayne, I G ^a   MacIntyre, D S ^a   Thoms, S ^a   Wilkinson, C D W ^a   Parker, E H C ^b   Gundlach, A M ^c  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); GATES (TRANSISTOR); GERMANIUM; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; OXIDATION; PRESSURE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTERING; TRANSCONDUCTANCE; TUNGSTEN;

CHANNEL MOBILITY; INTERFACE CHARGE DENSITIES; TUNGSTEN GATE;

MOSFET DEVICES;

EID: 0032669821     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990305     Document Type: Article

References (8)

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