High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3471-3475

  Goodyear, Andrew L ^a   Mackenzie, Sinclair ^a   Olynick, Deirdre L ^b   Anderson, Erik H ^b  

^a OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ASPECT RATIO; DRY ETCHING; SEMICONDUCTING SILICON; TUNGSTEN;

INDUCTIVELY COUPLED PLASMA (ICP) DRY ETCHING;

PLASMA ETCHING;

EID: 0034317404     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1326922     Document Type: Article

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