Modeling radiative properties of silicon with coatings and comparison with reflectance measurements

Journal of Thermophysics and Heat Transfer

Volumn 19, Issue 4, 2005, Pages 558-565

  Lee, B J ^a,c   Zhang, Z M ^a,c,d   Early, E A ^b,e   DeWitt, D P ^b,e   Tsai, B K ^b,e  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d AIAA   (United States)

^e Optical Technology Division

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL PROPERTIES; POLYSILICON; REFLECTION; SILICON WAFERS; SPECTROPHOTOMETERS; TEMPERATURE MEASUREMENT; THERMOMETERS; THIN FILMS;

OXIDE COATING; RADIATION THERMOMETRY; RADIATIVE PROPERTIES; RAPID THERMAL PROCESSING;

SILICON NITRIDE;

COATING; HEAT TRANSFER; SILICON;

EID: 13144257811     PISSN: 08878722     EISSN: 15336808     Source Type: Journal    
DOI: 10.2514/1.13596     Document Type: Review

References (37)

1. Roozeboom, F., and Parekh, N., "Rapid Thermal Processing Systems: A Review with Emphasis on Temperature Control," Journal of Vacuum Science and Technology B, Vol. 8, No. 6, 1990, pp. 1249-1259.
2. Timans, P. J., "Rapid Thermal Processing Technology for the 21st Century," Materials Science in Semiconductor Processing, Vol. 1, Nos. 3-4, 1998, pp. 169-179.
3. Zhang, Z. M., "Surface Temperature Measurement Using Optical Techniques," Annual Review of Heat Transfer, edited by C. L. Tien, Vol. 11, Begell House, New York, 2000, pp. 351-411.
4. Zhou, Y. H., Shen, Y. J., Zhang, Z. M., Tsai, B. K., and DeWitt, D. P., "A Monte Carlo Model for Predicting the Effective Emissivity of the Silicon Wafer in Rapid Thermal Processing Furnaces," International Journal of Heat and Mass Transfer, Vol. 45, No. 9, 2002, pp. 1945-1949.
5. Adams, B., Hunter, A., Yam, M., and Peuse, B., "Determining the Uncertainty of Wafer Temperature Measurements Induced by Variations in the Optical Properties of Common Semiconductor Materials," Rapid Thermal and Other Short-Time Processing Technologies: Proceedings of the International Symposium, Vol. 2000-9, Electrochemical Society, Pennington, NJ, 2000, pp. 363-374.
6. Shen, Y. J., Zhang, Z. M., Tsai, B. K., and DeWitt, D. P., "Bidirectional Reflectance Distribution Function of Rough Silicon Wafers," International Journal of Thermophysics, Vol. 22, No. 4, 2001, pp. 1311-1326.
7. Tang, K., and Buckius, R. O., "A Statistical Model of Wave Scattering from Random Rough Surfaces," International Journal of Heat and Mass Transfer, Vol. 44, No. 21, 2001, pp. 4059-4073.
8. Zhou, Y. H., and Zhang, Z. M., "Radiative Properties of Semitransparent Silicon Wafers with Rough Surfaces," Journal of Heat Transfer, Vol. 125, No. 3, 2003, pp. 462-470.
9. Yen, P., Optical Waves in Layered Media, Wiley, New York, 1998, Chap. 5.
10. Zhang, Z. M., Fu, C. J., and Zhu, Q. Z., "Optical and Thermal Radiative Properties of Semiconductors Related to Micro/Nanotechnology," Advances in Heat Transfer, Vol. 37, 2003, pp. 179-296.
11. Cohen, M. L., and Chelikowsky, J. R., Electronic Structure and Optical Properties of Semiconductors, 2nd edition, Springer-Verlag, Berlin, 1988, Chap. 8.
12. Hebb, J. P., "Pattern Effects in Rapid Thermal Processing," Ph.D. Dissertation, Dept. of Mechanical Engineering, Massachusetts Inst. of Technology, Cambridge, MA, 1997.
13. Ravindra, N. M., Sopori, B., Gokce, O. H., Cheng, S. X., Shenoy, A., Jin, L., Abedrabbo, S., Chen, W., and Zhang, Y., "Emissivity Measurements and Modeling of Silicon-Related Materials: An Overview," International Journal of Thermophysics, Vol. 22, No. 5, 2001, pp. 1593-1611.
14. Timans, P. J., "The Thermal Radiative Properties of Semiconductors," Advances in Rapid Thermal and Integrated Processing, edited by F. Roozeboom, Kluwer Academic, Dordrecht, The Netherlands, 1996, Chap. 2.
15. Edwards, D. F., "Silicon (Si)," Handbook of Optical Constants of Solids, edited by E. D. Palik, Academic Press, Orlando, 1985, pp. 547-569.
16. Sato, T., "Spectral Emissivity of Silicon," Japanese Journal of Applied Physics, Vol. 6, No. 3, 1967, pp. 339-347.
17. Jellison, G. E., Jr., and Modine, F. A., "Optical Functions of Silicon at Elevated Temperatures," Journal of Applied Physics, Vol. 76, No. 6, 1994, pp. 3758-3761.
18. Li, H. H., "Refractive Index of Silicon and Germanium and Its Wavelength and Temperature Derivatives," Journal of Physical and Chemical Reference Data, Vol. 9, No. 3, 1980, pp. 561-658.
19. Magunov, A. N., "Temperature Dependence of the Refractive Index of Silicon Single Crystal in the 300-700 K Range," Optics and Spectroscopy, Vol. 73, No. 2, 1992, pp. 205, 206.
20. Magunov, A. N., and Mudrov, E. V., "Optical Properties of Lightly Doped Single-Crystal Silicon Near the Absorption Edge at 300-700 K," Optics and Spectroscopy, Vol. 70, No. 1, 1991, pp. 83-85.
21. Timans, P. J., "Emissivity of Silicon at Elevated Temperature," Journal of Applied Physics, Vol. 74, No. 10, 1993, pp. 6353-6364.
22. MacFarlane, G. G., McLean, T. P., Quarrington, J. E., and Roberts, V., "Fine Structure in the Absorption-Edge Spectrum of Si," Physical Review, Vol. 111, No. 5, 1958, pp. 1245-1254.
23. Sturm, J. C., and Reaves, C. M., "Silicon Temperature Measurement by Infrared Absorption: Fundamental Processes and Doping Effects," IEEE Transactions on Electron Devices, Vol. 39, No. 1, 1992, pp. 81-88.
24. Vandenabeele, P., and Maex, K., "Influence of Temperature and Backside Roughness on the Emissivity of Si Wafers During Rapid Thermal Processing," Journal of Applied Physics, Vol. 72, No. 12, 1992, pp. 5867-5875.
25. Rogne, H., Timans, P. J., and Ahmed, H., "Infrared Absorption in Silicon at Elevated Temperatures," Applied Physics Letters, Vol. 69, No. 15, 1996, pp. 2190-2192.
26. Saritas, M., and McKell, H. D., "Absorption Coefficient of Si in the Wavelength Region Between 0.80-1.16 μm," Journal of Applied Physics, Vol. 61, No. 10, 1987, pp. 4923-4925.
27. 2) (Glass)," Handbook of Optical Constants of Solids, edited by E. D. Palik, Academic Press, Orlando, 1985, pp. 749-763.
28. 4) (Noncrystalline)," Handbook of Optical Constants of Solids, edited by E. D. Palik, Academic Press, Orlando, 1985, pp. 771-774.
29. Maltison, I. H., "Interspecimen Comparison of the Refractive Index of Fused Silica," Journal of the Optical Society of America, Vol. 55, No. 10, 1965, pp. 1205-1209.
30. Clark, A. H., "Optical Properties of Polycrystalline Semiconductor Films," Polycrystalline and Amorphous Thin Films and Devices, edited by L. L. Kazmerski, Academic Press, New York, 1980, pp. 135-152.
31. Jellison, G. E., Jr., Keefer, M., and Thornquist, L., "Spectroscopic Ellipsometry and Interference Reflectometry Measurements of CVD Silicon Grown on Oxidized Silicon," Proceedings of the Materials Research Society Symposium, Vol. 283, Materials Research Society, Pittsburgh, PA, 1993, pp. 561-566.
32. Lubberts, G., Burkey, B. C., Moser, F., and Trabka, E. A., "Optical Properties of Phosphorus-Doped Polycrystalline Silicon Layers," Journal of Applied Physics, Vol. 52, No. 11, 1981, pp. 6870-6878.
33. Zhang, Z. M., "Reexamination of the Transmittance Formulae of a Lamina," Journal of Heat Transfer, Vol. 119, No. 3, 1997, pp. 645-647.
34. Zhang, Z. M., "Optical Properties of a Slightly Absorbing Film for Oblique Incidence," Applied Optics, Vol. 38, No. 1, 1999, pp. 205-207.
35. Barnes, P. Y., Early, E. A., and Parr, A. C., Spectral Reflectance, Special Publ. 250-48, National Inst. of Standards, and Technology, Gaithersburg, MD, 1998, pp. 40-48.
36. Born, M., and Wolf, E., Principles of Optics, Cambridge Univ. Press, Cambridge, England, U.K., 2002, Chap. 1.
37. Zhang, Z. M., Lefever-Button, G., and Rowell, F. R., "Infrared Refractive Index and Extinction Coefficient of Polyimide Films," International Journal of Thermophysics, Vol. 19, No. 3, 1998, pp. 905-916.