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Volumn 69, Issue 15, 1996, Pages 2190-2192

Infrared absorption in silicon at elevated temperatures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000008471     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117161     Document Type: Article
Times cited : (37)

References (14)
  • 14
    • 0039465012 scopus 로고
    • edited by A. F. Gibson, F. A. Kroger, and R. E. Burgess Heywood, London
    • T. P. McLean, in Progress in Semiconductors, edited by A. F. Gibson, F. A. Kroger, and R. E. Burgess (Heywood, London, 1960), Vol. 5, pp. 53-102.
    • (1960) Progress in Semiconductors , vol.5 , pp. 53-102
    • McLean, T.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.