Properties of TiN films grown by atomic-layer chemical vapor deposition with a modified gaseous-pulse sequence

Materials Chemistry and Physics

Volumn 97, Issue 2-3, 2006, Pages 315-320

  Cheng, Hsyi En ^a   Lee, Wen Jen ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Atomic layer chemical vapor deposition (ALCVD); Titanium nitride

Indexed keywords

BYPRODUCTS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FILM GROWTH; SILICON; TITANIUM NITRIDE;

ATOMIC-LAYER CHEMICAL VAPOR DEPOSITION (ALCVD); DEPOSITION TEMPERATURE; PUMP-DOWN STEP; TIN FILMS;

THIN FILMS;

EID: 33645890280     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2005.08.017     Document Type: Article

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