Optical transitions on a type II semiconductor interface in the empirical tight-binding theory

Journal of Experimental and Theoretical Physics

Volumn 94, Issue 3, 2002, Pages 644-653

  Ivchenko, E L ^a   Nestoklon, M O ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

OPTICAL TRANSITION; PHOTOLUMINESCENCE POLARIZATION; TIGHT-BINDING THEORY;

HETEROJUNCTIONS;

EID: 23044533715     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1469162     Document Type: Article

References (34)

1. O. Krebs and P. Voisin, Phys. Rev. Lett. 77, 1829 (1996).
2. O. Krebs, W. Seidel, J. P. André, et al., Semicond. Sci. Technol. 12, 938 (1997).
3. O. Krebs, D. Rondi, J. L. Gentner, et al., Phys. Rev. Lett. 80, 5770 (1998).
4. E. L. Ivchenko, A. A. Toropov, and P. Voisin, Fiz. Tverd. Tela (St. Petersburg) 40, 1925 (1998)
5. [Phys. Solid State 40, 1748 (1998)].
6. A. A. Toropov, E. L. Ivchenko, O. Krebs, et al., Phys. Rev. B 63, 035 302 (2001).
7. E. L. Ivchenko, A. Yu. Kaminskiǐ, and I. L. Aleǐner, Zh. Éksp. Teor. Fiz. 104, 3401 (1993)
8. [JETP 77, 609 (1993)].
9. D. Vignaud, X. Wallart, F. Mollot, and B. Sermage, J. Appl. Phys. 84, 2138 (1998).
10. F. Fuchs, J. Schmitz, J. D. Ralston, et al., Superlattices Microstruct. 16, 35 (1994).
11. F. Fuchs, J. Schmitz, and N. Herres, in Proceedings of the 23rd International Conference on Physics of Semiconductors, Ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), Vol. 3, p. 1803.
12. A. V. Platonov, V. P. Kochereshko, E. L. Ivchenko, et al., Acta Phys. Pol. A 94, 479 (1998).
13. A. V. Platonov, V. P. Kochereshko, E. L. Ivchenko, et al., Phys. Rev. Lett. 83, 3546 (1999).
14. D. R. Yakovlev, E. L. Ivchenko,V. P. Kochereshko, et al., Phys. Rev. B 61, 2421 (2000).
15. M. Schmidt, M. Grün, S. Petillon, et al, Appl. Phys. Lett. 77, 85 (2000).
16. O. Krebs and P. Voisin, Phys. Rev. B 61, 7265 (2000).
17. P. O. Löwdin, J. Chem. Phys. 18, 365 (1950).
18. P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 44, 365 (1983).
19. J. M. Jancu, R. Scholz, F. Beltram, and F. Bassani, Phys. Rev. B 57, 6493 (1998).
20. Y.-C. Chang, Phys. Rev. B 25, 605 (1982).
21. D. J. Stukel, Phys. Rev. B 2, 1852 (1970).
22. M. Nagelstrasser, H. Dröge, H.-P. Steinrück, et al., Phys. Rev. B 58, 10 394 (1998).
23. M. Cruz, M. R. Beltran, C. Wang, et al., Phys. Rev. B 59, 15381 (1999).
24. T. G. Pedersen, K. Pedersen, and T. B. Kriestensen, Phys. Rev. B 63, 201 101 (2001).
25. L. C. Lew Yan Voon and L. R. Ram-Mohan, Phys. Rev. B 47, 15 500 (1993).
26. M. Graf and P. Vogl, Phys. Rev. B 51, 4940 (1995).
27. P. V. Santos, P. Etchegoin, M. Cardona, et al, Phys. Rev. B 50, 8746 (1994).
28. T. Dumitricā, J. S. Graves, and R. E. Allen, Phys. Rev. B 58, 15 340 (1998).
29. Y.-C. Chang and J. N. Schulman, Phys. Rev. B 31, 2069 (1985).
30. Y.-C. Chang and D. E. Aspnes, Phys. Rev. B 41, 12 002 (1990).
31. G. D. Sanders and Y.-C. Chang, Phys. Rev. B 45, 9202 (1992).
32. Z. Xu, Solid State Commun. 76, 1143 (1990)
33. L. M. Ramaniah and S. V. Nair, Phys. Rev. B 47, 7132 (1993).
34. A. Selloni, P. Marsella, and R. Del Sole, Phys. Rev. B 33, 8885 (1986).