Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4795, Issue , 2002, Pages 39-43

  Grein, C H ^a   Lau, W H ^b   Harbert, T L ^b   Flatte M E ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b UNIVERSITY OF IOWA   (United States)

Author keywords

Algasb; Alsb; Band engineering; Inas; Infrared detector; Ingasb; Superlattice

Indexed keywords

BONDING; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; ENERGY GAP; HAMILTONIANS; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM COMPOUNDS;

BAND ENGINEERING; SUPERLATTICE DETECTORS;

INFRARED DETECTORS;

EID: 0036989523     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.452265     Document Type: Conference Paper

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