Optimal operation of GaN thin film epitaxy employing control vector parametrization

AIChE Journal

Volumn 52, Issue 4, 2006, Pages 1378-1391

  Varshney, Amit ^a   Armaou, Antonios ^a  

^a The Pennsylvania State University   (United States)

Author keywords

Dissipative partial differential equations; Dynamic optimization, control vector parametrization; GaN; Karhunen Lo ve expansion; Metallorganic vapor phase epitaxy; Spatially distributed processes

Indexed keywords

DISSIPATIVE PARTIAL DIFFERENTIAL EQUATIONS; DYNAMIC OPTIMIZATION, CONTROL VECTOR PARAMETRIZATIONS; KARHUNEN-LOÈVE EXPANSIONS; SPATIALLY-DISTRIBUTED PROCESSES;

CONSTRAINT THEORY; GALLIUM NITRIDE; NONLINEAR EQUATIONS; NONLINEAR PROGRAMMING; OPTIMIZATION; PARTIAL DIFFERENTIAL EQUATIONS; THIN FILMS;

METALLORGANIC VAPOR PHASE EPITAXY;

CONSTRAINT THEORY; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NONLINEAR EQUATIONS; NONLINEAR PROGRAMMING; OPTIMIZATION; PARTIAL DIFFERENTIAL EQUATIONS; THIN FILMS;

EID: 33645685458     PISSN: 00011541     EISSN: 15475905     Source Type: Journal    
DOI: 10.1002/aic.10691     Document Type: Article

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