Computational studies of the transient behavior of horizontal MOVPE reactors

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 72-76

  Theodoropoulos, C ^a   Ingle, N K ^a,b   Mountziaris, T J ^a  

^a UNIVERSITY AT BUFFALO   (United States)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; MASS TRANSFER; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

HORIZONTAL MOVPE REACTORS; PECLET NUMBER;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030678224     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00637-9     Document Type: Article

References (15)

1. T.F. Kuech, in: Proc. IEEE 80 (1992) 1609.
2. D.I. Fotiadis, A.M. Kremer, D.R. McKenna and K.F. Jensen, J. Crystal Growth 85 (1987) 154.
3. S. Patnaik, R.A. Brown and C.A. Wang, J. Crystal Growth 96 (1989) 153.
4. M.J. Ludowise, J. Appl. Phys. 58 (1985) R31.
5. S.J. Bass, J. Crystal Growth 31 (1975) 172.
6. J. Van de Ven, G.M.J. Rutten, M.J. Raaijmakers and L.J. Giling, J. Crystal Growth 76 (1986) 352.
7. L. Stock and W. Richter, J. Crystal Growth 98 (1989) 148.
8. N.K. Ingle and T.J. Mountziaris, J. Fluid Mech. 277 (1994) 249.
9. G. Strang and G.J. Fix, An Analysis of the Finite Element Method (Prentice-Hall, New York, 1973).
10. C. Theodoropoulos, Masters Thesis, SUNY at Buffalo, 1996.
11. T.J. Mountziaris, S. Kalyanasundaram and N.K. Ingle, J. Crystal Growth 131 (1993) 283.
12. C. Theodoropoulos, N.K. Ingle, T.J. Mountziaris, Z. Chen, P.L. Liu, G. Kioseoglou and A. Petrou, J. Electrochem. Soc. 142 (1995) 2086.
13. T.J. Mountziaris and K.F. Jensen, J. Electrochem. Soc. 138 (1991) 2426.
14. D.H. Reep and S.K. Ghandi, J. Electrochem. Soc. 130 (1983) 675.
15. E.J. Thrush, G. Wale-Evans, J.E.A. Whiteaway, B.L. Lamb, D.R. Wight, N.G. Chew, A.G. Cullis and R.J.M. Griffiths, J. Electron. Mater. 13 (1984) 969.