Heterojunction band offsets and Schottky-barrier heights: Tersoff’s theory in the presence of strain

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 12, 1998, Pages 7864-7871

  Ohler, C ^a   Daniels, C ^a   Forster A ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001595865     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.7864     Document Type: Article

References (43)

1. C. Weisbuch, Alta Freq. Riv. Elettron. Italy 5, 35/199 (1993).
2. G. A. Baraff, J. A. Appelbaum, and D. R. Hamann, Phys. Rev. Lett. 38, 237 (1977).
3. C. G. Van de Walle and R. M. Martin, J. Vac. Sci. Technol. B 3, 1256 (1985).
4. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).
5. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 35, 8154 (1987).
6. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
7. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
8. J. Tersoff, Phys. Rev. B 30, 4874 (1984).
9. J. Tersoff, Phys. Rev. B 32, 6968 (1985).
10. J. Tersoff, J. Vac. Sci. Technol. B 3, 1157 (1985).
11. J. Tersoff, Surf. Sci. 168, 275 (1986).
12. J. Tersoff, in Heterojunction Band Discontinuities: Physics and Device Applications, edited by F. Capasso and G. Margaritondo (Elsevier, Amsterdam, 1987), p. 3.
13. R. L. Anderson, Solid-State Electron. 5, 341 (1962).
14. G. C. Osbourn, J. Appl. Phys. 53, 1586 (1982).
15. E. P. O’Reilly, Semicond. Sci. Technol. 4, 121 (1989).
16. J. Singh, in Handbook on Semiconductors, edited by T. S. Moss (Elsevier Science, Amsterdam, 1994), Vol. 2.
17. M. Cardona and N. E. Christensen, Phys. Rev. B 35, 6182 (1987).
18. Phys. Rev. BM. CardonaN. E. Christensen 36, 2906 (1987).
19. A. Baldereschi, Phys. Rev. B 7, 5212 (1973).
20. J. D. Jackson, Classical Electrodynamics (Wiley, New York, 1975).
21. W. Mönch, Phys. Rev. Lett. 58, 1260 (1987).
22. W. Mönch, Semiconductor Surfaces and Interfaces (Springer, Berlin, 1995).
23. L. Kleinman, Phys. Rev. B 24, 7412 (1981).
24. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 1996).
25. E. O. Kane, Phys. Rev. B 31, 5199 (1985).
26. F. H. Pollak and M. Cardona, Phys. Rev. 172, 816 (1968).
27. O. K. Andersen, Phys. Rev. B 12, 3060 (1975).
28. D. D. Koelling and G. O. Arbman, J. Phys. F 5, 2041 (1975).
29. D. J. Singh, Planewaves, Pseudopotentials and the LAPW Method (Kluwer, Norwell, 1994).
30. G. B. Bachelet, D. R. Hamann, and M. Schlüter, Phys. Rev. B 26, 4199 (1982).
31. E. Wigner, Phys. Rev. 46, 1002 (1934).
32. D. R. Hamann, Phys. Rev. Lett. 42, 662 (1979).
33. D. J. Chadi and M. L. Cohen, Phys. Rev. B 8, 5747 (1973).
34. T. Jarlborg and A. J. Freeman, Phys. Lett. 74A, 349 (1979).
35. D. Glötzel, B. Segall, and O. K. Andersen, Solid State Commun. 36, 403 (1980).
36. S. Adachi, J. Appl. Phys. 58, R1 (1985).
37. W. Mönch, Appl. Surf. Sci. 117/118, 380 (1997).
38. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
39. G. P. Schwartz, M. S. Hybertsen, J. Bevk, R. G. Nuzzo, J. P. Mannaerts, and G. J. Gualtieri, Phys. Rev. B 39, 1235 (1989).
40. E. T. Yu, E. T. Croke, D. H. Chow, D. A. Collins, M. C. Phillips, T. C. McGill, J. O. McCaldin, and R. H. Miles, J. Vac. Sci. Technol. B 8, 908 (1990).
41. C. Ohler, R. Kohleick, A. Förster, and H. Lüth, Phys. Rev. B 50, 7833 (1994).
42. C. Ohler, J. Moers, A. Förster, and H. Lüth, J. Vac. Sci. Technol. B 13, 1728 (1995).
43. C. Ohler, C. Daniels, C. Ungermanns, A. Förster, and H. Lüth (unpublished).