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Volumn 43, Issue 4 B, 2004, Pages 1713-1716
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Schottky barrier height reduction and drive current improvement in metal source/drain MOSFET with strained-Si channel
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Author keywords
Bi axial strain; Charge neutrality level; Deformation potential; Fermi level pinning; Green's function; Hydrostatic strain; Interface dipole theory; Metal source and drain; Silicon band structure; Sohottky barrier height; Strained silicon
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Indexed keywords
BAND STRUCTURE;
DEFORMATION;
ELECTRIC CURRENTS;
ELECTRIC POTENTIAL;
ELECTRIC RESISTANCE;
FERMI LEVEL;
GREEN'S FUNCTION;
SCHOTTKY BARRIER DIODES;
SILICON;
STRAIN;
BI-AXIAL STRAIN;
CHARGE NEUTRALITY LEVEL;
DEFORMATION POTENTIALS;
FERMI LEVEL PINNING;
HYDROSTATIC STRAIN;
INTERFACE DIPOLE THEORY;
METAL SOURCE AND DRAIN;
SCHOTTKY BARRIER HEIGHT;
SILICON BAND STRUCTURE;
STRAINED SILICON;
MOSFET DEVICES;
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EID: 3142526739
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.1713 Document Type: Conference Paper |
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Times cited : (17)
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References (13)
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