Properties of radio-frequency-sputter-deposited GaN films in a nitrogenhydrogen mixed gas

Journal of Applied Physics

Volumn 97, Issue 9, 2005, Pages

  Miyazaki, Takayuki ^a   Takada, Kouhei ^a   Adachi, Sadao ^a   Ohtsuka, Kohji ^b  

^a GUNMA UNIVERSITY   (Japan)

^b SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODE SPUTTERING; REACTIVE SPUTTERING; SPUTTERING PRESSURE; TURBO-MOLECULAR PUMP;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; FREQUENCIES; LIGHT ABSORPTION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SPUTTERING; X RAY DIFFRACTION;

THIN FILMS;

EID: 18844417372     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1888027     Document Type: Article

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