Recoverable residual image induced by hysteresis of thin film transistors in active matrix organic light emitting diode displays

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 4 A, 2004, Pages

  Kim, Byeong Koo ^a   Kim, Ohyun ^a   Chung, Hoon Ju ^b   Chang, Jae Won ^b   Ha, Yong Min ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b LG Display Co Ltd   (South Korea)

Author keywords

Active matrix; AMOLED; Hysteresis; Organic light emitting diode; Polysilicon; Residual image; Thin film transistor

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; HYSTERESIS; LIGHT EMITTING DIODES; LOW TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTING INDIUM COMPOUNDS; SILICON NITRIDE;

ACTIVE MATRICES; AMOLED; ORGANIC LIGHT EITTING DIODES (OLED); RESIDUAL IMAGES;

THIN FILM TRANSISTORS;

EID: 2942618963     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l482     Document Type: Article

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