Updated technology of ion implantation applicable to the low-temperature Poly-Si TFT process

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 316-321

  Yoneda, Kiyoshi ^a   Yuda, Shinji ^a   Suzuki, Koji ^a   Yamada, Tsutomu ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPING; CHANNEL DOPINGS; DOPING METHODS; DOPING PROCESS; HIGH DOSE; ION DOPING; LOW DOSE; LOW-TEMPERATURE POLY-SI; LOW-TEMPERATURE POLY-SI TFT; LSI FABRICATION; REPRODUCIBILITIES; TOP GATE;

BORON; BORON COMPOUNDS;

ION IMPLANTATION;

EID: 78649822188     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924152     Document Type: Conference Paper

References (8)

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4. nd Int. Disp. Workshop. 2,1995, pp. 7-10.
5. I. Nakamoto H. Hourai, H, Kuwabara, A, Yoshinouchi, "Ion Shower Doping System for Poly-Si TFTs" Proc. AM-LCD'99, 1999, pp. 155-157.
6. M. Sato, J. Blake, A. Brailove, K. Chen, M. King, P.H. Rose, "A High Throughput Ion Implanter for AMLCD's" Proc. AM-LCD'96,1996, pp. 353-356.
7. K. Shimamura, N. Miyatake, K. Ujihara, K. Ogura, T. Degawa, "Mass-Analyzed Ion Implantation System for Flat Panel Displays" Proc. AM-LCD'99, 1999, pp. 159-160.
8. th Int. Conf. Ion Implantation Technology, IEEE, 1998, pp. 354-357.