Fabrication and characterisation of poly-Si TFTs with self-aligned lightly-doped drain

SID Conference Record of the International Display Research Conference

Volumn , Issue , 2000, Pages 119-122

  Rohlfing, F W ^a   Ayres, J R ^a   Brotherton, S D ^a   Fisher, C A ^a   McCulloch, D J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FABRICATION; LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTOR DOPING; SYSTEM STABILITY;

FIELD-RELIEF ARCHITECTURES;

THIN FILM TRANSISTORS;

EID: 0034589580     PISSN: 10831312     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J.A. Ayres, S.D. Brotherton, D.J. McCulloch and M.J. Trainor, Jpn. J. Appl. Phys., 37, 1801 (1998).
2. S.S. Chung and J.-J. Yang, IEEE Trans. Elec. Devi., 46(7), 1371 (1999).
3. R. Bellens, G. van den Bosch, P. Habras, J.-P. Miéville, G. Badenes, A. Clerix, G. Groeseneken, L. Deferm, H.E. Maes, IEEE Trans. Elec. Devi., 43(9), 1407 (1996).
4. F.-C. Hsu and H.R. Grinolds, IEEE Elect. Dev. Lett., Vol. EDL-5, No. 3, 1984.