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Volumn 149, Issue 4, 2002, Pages
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Fabrication of high performance low-temperature poly-Si thin-film transistors using a modulated process
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Author keywords
[No Author keywords available]
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Indexed keywords
AMMONIA;
AMORPHOUS SILICON;
ANNEALING;
CRYSTALLIZATION;
GRAIN SIZE AND SHAPE;
PASSIVATION;
PHASE TRANSITIONS;
PLASMA ETCHING;
POLYSILICON;
REACTIVE ION ETCHING;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR JUNCTIONS;
CHANNEL REGIONS;
CONVENTIONAL PROCESS;
ELECTRICAL STRESS INDUCED DEGRADATION;
IMPLANT ANNEALING;
MODULATED PROCESS;
PLASMA PASSIVATION EFFICIENCY;
SOLID PHASE CRYSTALLIZATION;
THIN FILM TRANSISTORS;
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EID: 0036531269
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1452123 Document Type: Article |
Times cited : (7)
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References (20)
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