Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

Applied Physics Letters

Volumn 88, Issue 13, 2006, Pages

  Toccoli, T ^a   Pallaoro, A ^a   Copped N ^a   Iannotta, S ^a   De Angelis, F ^b   Mariucci, L ^b   Fortunato, G ^b  

^a ITC IRST   (Italy)

^b IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; KINETIC ENERGY; MOLECULAR BEAMS; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS; THERMAL EFFECTS;

FIELD-EFFECT MOBILITY; FLAT FILMS; MOLECULAR BEAM DEPOSITION; SUPERSONIC MOLECULAR BEAMS;

FIELD EFFECT TRANSISTORS;

EID: 33645509671     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2187494     Document Type: Article

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