CCl4-based RIE pattern transfer into facets of mesas formed by wet etching in InP(100)

Electrochemical and Solid-State Letters

Volumn 9, Issue 2, 2006, Pages

  Elias P ^d   Hascik S ^a   Martaus, J ^a   Kostic I ^b   Soltys J ^a   Hotovy I ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INSTITUTE OF INFORMATICS   (Slovakia)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARBON TETRACHLORIDE; CRYSTAL STRUCTURE; DRY ETCHING; HELIUM; REACTIVE ION ETCHING; SURFACE ROUGHNESS;

CCL4; ETCHING RATES; INP(100) WAFERS; ROOT-MEAN-SQUARE ROUGHNESS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33645504092     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2139978     Document Type: Article

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