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Journal of Crystal Growth

Volumn 233, Issue 1-2, 2001, Pages 141-149

OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with {110} quasi facets

(4) Elias P a Cambel, V a Hasenohrl S a Kostic I b

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b INSTITUTE OF INFORMATICS (Slovakia)

Author keywords

A1. surface structure; A3. low pressure metalorganic vapor phase epitaxy; B2. semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ELECTRIC INSULATING MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS;

QUASI FACETS;

SEMICONDUCTOR GROWTH;

EID: 0035502128 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01528-7 Document Type: Article

Times cited : (6)

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