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Electrochemical and Solid-State Letters

Volumn 9, Issue 5, 2006, Pages

Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

(8) Sun, Jie a,b Li, Ruoyuan a Zhao, Chang a Yu, Like a Ye, Xiaoling a Xu, Bo a Chen, Yonghai a Wang, Zhanguo a

a INSTITUTE OF SEMICONDUCTORS (China)

b LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; HYSTERESIS; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS;

CHARGING/DISCHARGING EFFECT; ELECTRON INJECTION; ELECTRON RESONANT TUNNELING; RESONANT TUNNELING DIODES;

ELECTRON TUNNELING;

EID: 33645305145 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.2180529 Document Type: Article

Times cited : (4)

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