Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Applied Physics Letters

Volumn 82, Issue 8, 2003, Pages 1209-1211

  Hapke Wurst, I ^a,c   Zeitler, U ^a,d   Keyser, U F ^a   Haug, R J ^a   Pierz, K ^b   Ma, Z ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; GROUND STATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RESONANT TUNNELING; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

ONSET VOLTAGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037463243     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555712     Document Type: Article

References (11)

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