Electron and hole transport through quantum dots

Journal of Applied Physics

Volumn 92, Issue 11, 2002, Pages 6662-6665

  Li, Shu Shen ^a   Abliz, Ahmad ^a   Yang, Fu Hua ^a   Niu, Zhi Chuan ^a   Feng, Song Lin ^a   Xia, Jian Bai ^a   Hirose, Kenji ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HAMILTONIANS; HOLE MOBILITY; MATHEMATICAL MODELS; PHOTOELECTRIC DEVICES; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM DOTS;

HOLE TRANSPORT;

ELECTRON TRANSPORT PROPERTIES;

EID: 0036904234     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1518754     Document Type: Article

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