Tunneling current through self-assembled inas quantum dots embedded in symmetric and asymmetric AlGaAs barriers

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1303-1307

  Suzuki, T ^a   Haga, Y ^a   Nomoto, K ^a   Taira, K ^a   Hase, I ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TUNNEL DIODES;

ELECTRON ACCUMULATION; VOLTAGE POLARITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032116631     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00021-5     Document Type: Article

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