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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 140, Issue 1-2, 1998, Pages 70-74

Infrared absorption spectroscopy study of phase formation in SiC layers synthesized by carbon implantation into silicon with a metal vapor vacuum arc ion source

(5) Wong, S P a Chen, Dihu a Ho, L C a Yan, H a,b Kwok, R W M a

a CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

b BEIJING UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTALLIZATION; INFRARED RADIATION; INFRARED SPECTROSCOPY; ION SOURCES; SEMICONDUCTING SILICON; SILICON CARBIDE; THERMAL EFFECTS; VACUUM TECHNOLOGY;

METAL VAPOR VACUUM ARC ION SOURCES;

ION IMPLANTATION;

EID: 0032047404 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(97)00924-5 Document Type: Article

Times cited : (30)

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