Exoelectron emission from silicon nanocrystals

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Rosenman, Gil ^a   Aronov, Daniel ^a   Molotskii, Michael ^a   Roizin, Yakov ^b   Heiman, Alexey ^b   Mei, Wan Yuet ^c   De Blank, Rene ^c  

^a TEL AVIV UNIVERSITY   (Israel)

^b TOWER SEMICONDUCTOR LTD   (Israel)

^c ASM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

FLASH MEMORY; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; SILICA; SILICON; STIMULATED EMISSION;

CHARGE RETENTION; EXOELECTRON EMISSION; SEMICONDUCTOR MEMORIES; SILICON NANOCRYSTALS;

ELECTRON EMISSION;

EID: 33645218203     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2177375     Document Type: Article

References (29)

1. S. Tiwari, F. Rana, H. Hanafi, A. Harstein, and E. F. Crabbe, Appl. Phys. Lett. 68, 1377 (1996)
2. B. DeSalvo et al., Tech. Dig. - Int. Electron Devices Meet. 2003, 597.
3. G. Ammendola et al., Solid-State Electron. 48, 1483 (2004)
4. R. A. Rao et al., Solid-State Electron. 48, 1463 (2004)
5. O. Gywat, H.-A. Engel. D. Loss, R. J. Epstein, F. Mendoza, and D. Awschalom, Phys. Rev. B 69, 205303 (2004)
6. H.-A. Engel and D. Loss, Phys. Rev. Lett. 86, 4648 (2001).
7. O. Engström, M. Malmkvist, Y. Fu, H. Ö. Olafsson, and E. Ö. Sveinbjörnsson, Appl. Phys. Lett. 83, 3578 (2003)
8. S. Schulz, S. Schnull, Ch. Heyn, and W. Hansen, Phys. Rev. B 69, 195317 (2004)
9. A. A. Dadykin, A. G. Naumovets, Y. N. Kozyrev, M. Y. Rubezhanska, P. M. Lytvyn, and Y. M Litvin, Prog. Surf. Sci. 74, 305 (2003)
10. Y. Masumoto and T. Takagahara, Semiconductor Quantum Dots: Physics, Spectroscopy, and Applications (Springer, Berlin, 2002)
11. U. Woggon, Optical Properties of Semiconductor Quantum Dots (Springer-Verlag, Berlin, 1997)
12. H. Käämbre, Proceedings of the Fifth International Symposium on Exoelectron Emission and Dosimetry, Zvikov, Poland, 1976 (unpublished), p. 89.
13. M. Forscale, T. Gregorkiewicz, I. V. Bradley, and J.-P. R. Wells, Phys. Rev. B 65, 195208 (2002)
14. J. Lin, G. Q. Yao, J. Q. Duan, and G. G. Qin, Solid State Commun 97, 221 (1996)
15. M. V. Wolkin, J. Jorné, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197 (1999)
16. G. Rosenman, M. Naich, M. Molotskii, Yu. Dechtiar, and V. Noskov, Appl. Phys. Lett. 80, 2743 (2002)
17. M. Naich, G. Rosenman, Ya. Roizin, and M. Molotskii, Solid-State Electron 48, 477 (2004)
18. M. Naich, G. Rosenman, and Ya. Roizin, Thin Solid Films 471, 166 (2005)
19. M. Molotskii, M. Naich, and G. Rosenman, J. Appl. Phys. 94, 4652 (2003)
20. L. Oster, V. Yaskolko, and J. Haddad, Phys. Status Solidi A 174, 431 (1999)
21. P. Iacconi, D. Lapraz, R. Bindi, and M. Benabdesselam, Phys. Status Solidi A 163, 337 (1997)
22. Y. M. Wan, K. van der Jeugd, T. Baron, B. DeSalvo, and P. Mur, Mater. Res. Soc. Symp. Proc. 830, D611 (2005)
23. R. H. Bube, Photoelectronic Properties of Semiconductors (Cambridge University Press, Cambridge, 1992), p.171.
24. L. Skuja, J. Non-Cryst. Solids 149, 77 (1992)
25. E. M. Dianov, V. O. Sokolov, and V. B. Sulimov, J. Non-Cryst. Solids 149, 5 (1992)
26. G. Pacchioni and G. Ierano, Phys. Rev. B 57, 818 (1998).
27. V. A. Gritsenko, A. V. Shaposhnikov, Y. N. Novikov, A. P. Baraban, Hei Wong, G. M. Zhidomirov, and M. Roger, Microelectron. Reliab. 43, 665 (2003)
28. V. J. Kapoor, F. J. Feigl, and S. R. Butler, J. Appl. Phys. 48, 739 (1977).
29. Ya. Roizin, M. Gutman, E. Aloni, V. Kairys, and P. Zisman, Proceedings of the 19th IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, CA, 16-20 February 2003 (unpublished)