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Solid State Communications

Volumn 97, Issue 3, 1996, Pages 221-224

Ultraviolet light emission from oxidized porous silicon

(4) Lina, J a Yao, G Q a Duan, J Q a Qin, G G a,b

a PEKING UNIVERSITY (China)

b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; EMISSION SPECTROSCOPY; HEAT TREATMENT; HIGH TEMPERATURE OPERATIONS; LUMINESCENCE; NITROGEN; POROSITY; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; ULTRAVIOLET RADIATION;

ANODIZATION CONDITIONS; PHOTOLUMINESCENCE SPECTRA; SILICON OXIDE LAYERS; WAVELENGTH;

LIGHT EMISSION;

EID: 0029753993 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1098(95)00650-8 Document Type: Article

Times cited : (46)

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