Characterization of ZrB2(0 0 0 1) surface prepared by ex situ HF solution treatment toward applications as a substrate for GaN growth

Surface Science

Volumn 600, Issue 7, 2006, Pages 1439-1449

  Armitage, R ^a   Suda, J ^a   Kimoto, T ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Borides; Epitaxy; Gallium nitride; RHEED; Sticking; X ray photoelectron spectroscopy; ZrB2

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORIDES; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

FLOATING ZONES; STICKING; THERMAL CLEANING; ZRB2;

CRYSTAL GROWTH;

EID: 33645213858     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.01.032     Document Type: Article

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