ZrB2 substrate for nitride semiconductors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2260-2264

  Kinoshita, Hiroyuki ^a   Otani, Shigeki ^b   Kamiyama, Satoshi ^c   Amano, Hiroshi ^c   Akasaki, Isamu ^c   Suda, Jun ^d   Matsunami, Hiroyuki ^d  

^a KYOCERA CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c MEIJO UNIVERSITY   (Japan)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

Cleavage; Floating zone; GaN; Lattice matched substrate; ZrB2

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY;

CLEAVAGE PROPERTY; FLOATING ZONE METHOD; LATTICE-MATCHED SUBSTRATE; ZIRCONIUM DIBORIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037668204     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2260     Document Type: Article

References (7)

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