Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2191-2194

  Armitage, R ^a   Suda, J ^a   Kimoto, T ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; NUCLEATION; OPTIMIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; X RAY ANALYSIS; ZIRCONIUM COMPOUNDS;

HIGH-TEMPERATURE GROWTH; NUCLEATION LAYERS; SUB-GRAIN STRUCTURE; X-RAY CHARACTERISTICS;

GALLIUM NITRIDE;

EID: 26044454173     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461539     Document Type: Conference Paper

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