Hydrogen passivation effects on carbon dangling bond defects accompanying a nearby hydrogen atom in p-type CVD diamond

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 300-303

  Mizuochi, N ^a,b,c   Ogura, M ^b,c   Isoya, J ^a,b   Okushi, H ^b,c   Yamasaki, S ^a,b,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Defects; Diamond; Electron paramagnetic resonance; Hydrogen passivation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DEUTERIUM; EPITAXIAL GROWTH; HYDROGEN; MICROWAVES; PARAMAGNETIC RESONANCE; PASSIVATION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

BORON-DOPED CVD HOMOEPITAXIAL DIAMOND FILMS; CARBON DANGLING BOND DEFECTS; DEUTERIUM PLASMA EXPOSURE; HYDROGEN PASSIVATION; SIGNAL INTENSITY;

DIAMONDS;

EID: 33645160796     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.077     Document Type: Conference Paper

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