Identification of Ga-Interstitial defects in GaNyP1-y and AlxGa1-xNyP1-y

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 12, 2004, Pages

  Thinh, N Q ^a   Vorona, I P ^a,f   Buyanova, I A ^a   Chen, W M ^a   Limpijumnong, Sukit ^b   Zhang, S B ^c   Hong, Y G ^d   Tu, C W ^d   Utsumi, A ^e   Furukawa, Y ^e   Moon, S ^e   Wakahara, A ^e   Yonezu, H ^e  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SURANAREE UNIVERSITY OF TECHNOLOGY   (Thailand)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^f Physics Institute   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; GALLIUM;

ARTICLE; ELECTRON; MOLECULAR DYNAMICS; NUCLEAR MAGNETIC RESONANCE; OPTICS; SEMICONDUCTOR; WAVEFORM;

EID: 20844454221     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.121201     Document Type: Article

References (24)

1. G. D. Watkins, Semicond. Semimetals 51A, 1 (1998).
2. B. C. Cavenett, Adv. Phys. 30, 475 (1981).
3. T. A. Kennedy and E. R. Glaser, Semicond. Semimetals 51A, 93 (1998).
4. W. M. Chen, Thin Solid Films 364, 45 (2000).
5. W. M. Chen, in EPR of Free Radicals in Solids, edited by A. Lund and M. Shiotani (Kluwer Academic, Dordrecht, 2003), p. 601.
6. K. M. Lee, in Defects in Electronic Materials, edited by M. Stavola et al., MRS Symposia Proceedings No. 104 (Material Research Society, Pittsburgh, 1988), p. 449.
7. W. M. Chen and B. Monemar, Phys. Rev. B 40, 1365 (1989).
8. M. Godlewski and B. Monemar, Phys. Rev. B 37, 2752 (1988).
9. T. A. Kennedy and M. G. Spencer, Phys. Rev. Lett. 57, 2690 (1986).
10. T. A. Kennedy, R. Magno, and M. G. Spencer, Phys. Rev. B 37, 6325 (1988).
11. J. M. Trombetta, T. A. Kennedy, W. Tseng, and D. Gammon, Phys. Rev. B 43, 2458 (1991).
12. T. Wimbauer et al., Phys. Rev. B 58, 4892 (1998).
13. C. Bozdog et al., Phys. Rev. B 59, 12 479 (1999).
14. K. H. Chow, G. D. Watkins, Akira Usui, and M. Mizuta, Phys. Rev. Lett. 85, 2761 (2000).
15. P. N. Hai, W. M. Chen, I. A. Buyanova, B. Monemar, H. Amano, and I. Akasaki, Phys. Rev. B 62, R10 607 (2000).
16. P. Blaha, K. Schwarz, G. K. H. Madsen, D. Kvasnicka, and J. Luitz, WIEN2k, An Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties (Technische Universität Wien, Vienna, Austria, 2001).
17. F. Rong and G. D. Watkins, Phys. Rev. Lett. 58, 1486 (1987).
18. C. G. Van de Walle and P. E. Blöchl, Phys. Rev. B 47, 4244 (1993).
19. W. M. Chen and B. Monemar, Appl. Phys. A: Solids Surf. 53, 130 (1991).
20. In Fig. 1 the weaker intensity of the experimental ODMR lines at low fields as compared to that of the simulated ones, in the case of the X band ODMR spectra, can be attributed to the fact that the simulations only take into account the probabilities of magnetic-dipole-allowed electron spin resonance transitions but not the difference in recombination rates of the spin sublevels (Refs. 4 and 5), that undergo strong admixing of states at low fields due to the strong HF interaction.
21. -1 or 64% of our value. (2) Our calculations without relativistic effects also give a reduced A at 65% of our present value.
22. A. K. Koh and D. J. Miller, At. Data Nucl. Data Tables 33, 235 (1985).
23. J. R. Morton and K. R. Preston, J. Magn. Reson. (1969-1992) 30, 577 (1978).
24. G. A. Baraff and M. Schlutter, Phys. Rev. Lett. 55, 1327 (1985).