SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 692, Issue , 2002, Pages 67-72

Nature and formation of non-radiative defects in GaNAs and InGaAsN

(8) Chen, W M a Thinh, N Q a Buyanova, I A a Hai, P N a Xin, H P b Tu, C W b Li, Wei c Pessa, M c

a LINKÖPING UNIVERSITY (Sweden)

b UNIVERSITY OF CALIFORNIA (United States)

c TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL DEFECTS; LOW TEMPERATURE EFFECTS; MAGNETIC RESONANCE; MOLECULAR BEAM EPITAXY; NITROGEN; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM COMPOUNDS;

NON-RADIATIVE DEFECTS; OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036056408 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (5)

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