Oxygen and carbon transfer during solidification of semiconductor grade silicon in different processes

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 541-553

  Ribeyron, P J ^a   Durand, F ^a  

^a Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY LAYERS; CARBON; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DISSOLUTION; EVAPORATION; MATHEMATICAL MODELS; OXYGEN; PHASE INTERFACES; SOLIDIFICATION; TRANSPORT PROPERTIES;

CRYSTAL PULLING; CZOCHRALSKI PULLING; ELECTROMAGNETIC CONTINUOUS PULLING; FLOATING ZONE;

SEMICONDUCTING SILICON;

EID: 0033876822     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00878-7     Document Type: Article

References (29)

1. Leroy B. Rev. Phys. Appl. 21:1986;467.
2. Borghesi A., Pivac B., Sassella A., Stella A. J. Appl. Phys. (Appl. Phys. Rev.). 77:1995;4169.
3. W.C. O'Mara, Oxygen, carbon and nitrogen in silicon, in: O'Mara et al. (Eds.), Handbook of Semiconductor Silicon Technology, Noyes Publ., 1990, pp. 451-549.
4. Wen Lin (AT and T Bell labs), The incorporation of oxygen into silicon crystals, Semiconductors and Semi-Metals, Vol. 42, Academic Press, New York, 1994, pp. 9-52.
5. Davies G., Newman R.C. Carbon in monocrystalline silicon. Mahajan S. Handbook of semiconductors. Vol. 3:1994;1557-1635 Elsevier Science, Amsterdam.
6. W. Dietze, W. Keller, A. Mühlbauer (Universität Hannover (D)), Float-Zone grown silicon, in: Crystals, Growth, Properties and Applications, Vol. 5, Springer Berlin, 1981, pp. 1-42.
7. R.K. Brenneman, High performance CDS polycrystalline silicon: challenges and opportunities, Technical Digest of the Int. PVSEC-5, Kyoto, Japan, 1990, pp. 197-199.
8. Fally J., Fabre E., Chabot B. Rev. Phys. Appl. 22:1987;529.
9. Lasnier F., Ang T.G. Photovoltaic Engineering Handbook. 1987;Adam Hilger, Bristol.
10. Ciszek T.F. J. Electrochem. Soc. Solid State Sci. Technol. 132(4):1985;963.
11. K. Kaneko, R. Kawamura, T. Misawa, Present status and future prospects of electromagnetic casting for silicon solar cells, Conference of the PV Proceedings, Hawaii, December 1994, pp. 30-33.
12. Dour G., Ehret E., Laugier A., Sarti D., Garnier M., Durand F. J. Crystal Growth. 193:1998;230.
13. Carlberg T., King T.B., Witt A.F. J. Electrochem. Soc. 1982;189.
14. Kim K.M., Langlois W.E. J. Electrochem. Soc. 138:1991;81.
15. Langlois W.E., Kim K.M., Walker J.S. J. Crystal Growth. 126:1993;352.
16. Chaney R., Varker C.J. J. Crystal Growth. 33:1976;188.
17. Zulehner W., Huber D. Czochralski-grown silicon. Crystals, Growth, Properties and Applications. Vol. 8:1982;1-144 Springer, Berlin.
18. Nozaki T., Yatsurugi Y., Akiyama N. J. Electrochem. Soc. 117:1970;1566.
19. Kolbesen B.O., Mühlbauer A. Solid-State Electron. 8(25):1982;759.
20. Hallstedt B. Calphad. 16:1992;53.
21. Zulehner W. Semiconductors, Czochralski growth of Si and Ge, Landolt-Börnstein Series. Vol. 3, 17c:1984;28-39 Springer, Berlin.
22. Durand F., Duby J.C. J. Phase Equilibria. 20:1999;61.
23. Burton J.A., Prim R.C., Slichter W.P. J. Chem. Phys. 21(11):1953;1987.
24. Pfann W.G. Trans. AIME. 194:1952;747.
25. Gulliver G.H. Metallic Alloys, Their Structure and Constitution (Appendix p. 397). 1922;Griffin, London.
26. Scheil E. Z. Metall. 34:1942;70.
27. Mühlbauer A. Semiconductors, Si and Ge, technological data, Landolt-Börnstein Series. Vol. 3, 17c:1984;12-20 Springer, Berlin.
28. D. Ballutaud, Y. Marfaing, Internal Report of the JOULE-Menhir Programme, 1997.
29. Yatsurugi Y., Akiyama N., Endo Y., Nozaki T. J. Electrochem. Soc. 1973;975.