Molecular-dynamics-based model for the formation of arsenic interstitials during low-temperature growth of GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 7, 2005, Pages

  Kunsági Máté, Sándor ^a   Schür, Carsten ^b   Végh, Eszter ^a   Marek, Tamas ^b   Strunk, Horst P ^b  

^a UNIVERSITY OF PÉCS   (Hungary)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644960388     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.075315     Document Type: Article

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