Energetics of growth on the c (4 X 4) reconstructed GaAs(001) surface and antisite formation: An ab initio approach

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 19, 2004, Pages

  Kunsági Máté, Sándor ^a   Schür, Carsten ^b   Marek, Tamas ^b   Strunk, Horst P ^b  

^a UNIVERSITY OF PÉCS   (Hungary)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

AB INITIO CALCULATION; ARTICLE; CRYSTAL; ELECTRONICS; ENERGY; GEOMETRY; MODEL; TEMPERATURE;

EID: 37649031169     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.193301     Document Type: Article

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