Arsenic flux dependence of incorporation of excess arsenic in molecular beam epitaxy of GaAs at low temperature

Applied Physics Letters

Volumn 73, Issue 11, 1998, Pages 1529-1531

  Suda, A ^a   Otsuka, N ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000869004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122195     Document Type: Article

References (22)

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