Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 8, 2005, Pages

  Lai, K ^a   Pan, W ^b   Tsui, D C ^a   Lyon, S A ^a   Muhlberger M ^c   Schaffler F ^c  

^a Princeton University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644955654     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.081313     Document Type: Article

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