Spin susceptibility of an ultra-low-density two-dimensional electron system

Physical Review Letters

Volumn 90, Issue 5, 2003, Pages

  Zhu, J ^a   Stormer, H L ^a,b   Pfeiffer, L N ^b   Baldwin, K W ^b   West, K W ^b  

^a Columbia University ^*  (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DENSITY (SPECIFIC GRAVITY); FERMI LIQUIDS; GATES (TRANSISTOR); HETEROJUNCTIONS; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TWO DIMENSIONAL;

DENSITY DEPENDENCE; HETEROJUNCTION INSULATED GATE FIELD EFFECT TRANSISTOR; SPIN SUSCEPTIBILITY; ULTRA LOW DENSITY TWO DIMENSIONAL ELECTRON SYSTEM;

ELECTRON ENERGY LEVELS;

EID: 0037422975     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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