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Physical Review Letters

Volumn 88, Issue 7, 2002, Pages 764011-764014

Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high-mobility (100) Si-inversion layers

(4) Pudalov, V M a,b Brunthaler, G c Prinz, A c Bauer, G c

a LEBEDEV PHYSICAL INSTITUTE (Russian Federation)

b RUTGERS UNIVERSITY (United States)

c JOHANNES KEPLER UNIVERSITY LINZ (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRONS; MAGNETIC FIELDS; MOLECULAR ORIENTATION; POLARIZATION; SEMICONDUCTING SILICON;

HOPPING REGIMES;

MAGNETORESISTANCE;

EID: 4243605918 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.88.076401 Document Type: Article

Times cited : (66)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.