|
|
Volumn 86, Issue 13, 2001, Pages 2858-2861
|
|
In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
BAND STRUCTURE;
CARRIER CONCENTRATION;
ELECTRON MOBILITY;
ELECTRON TRANSITIONS;
FERMI SURFACE;
GROUND STATE;
MAGNETIC FIELD EFFECTS;
MORPHOLOGY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SHUBNIKOV-DE HAAS EFFECT;
THERMAL EFFECTS;
IN-PLANE MAGNETIC FIELD INDUCED SPIN POLARIZATION;
PARALLEL MAGNETIC FIELD;
PARALLEL MAGNETORESISTANCE;
SPIN SUBBAND DENSITY;
TEMPERATURE DEPENDENCE;
TWO-DIMENSIONAL HOLE SYSTEM;
ZEEMAN ENERGY;
SEMICONDUCTOR QUANTUM WELLS;
|
|
EID: 0035952929
PISSN: 00319007
EISSN: None
Source Type: Journal
DOI: 10.1103/PhysRevLett.86.2858 Document Type: Article |
|
Times cited : (118)
|
|
References (27)
|
