The two-flux composite fermion series of fractional quantum Hall states in strained (100) Si

International Journal of Modern Physics B

Volumn 18, Issue 27-29, 2004, Pages 3533-3535

  Lai, K ^a   Pan, W ^b   Tsui, D C ^a   Lyon, S ^a   Muhlberger, M ^c   Schaffler, F ^c  

^a Princeton University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Composite fermion; Fractional quantum Hall effect; Strained Si

Indexed keywords

GERMANIUM; SILICON;

CONFERENCE PAPER; FERMION; MAGNETISM; QUANTUM THEORY; TRANSPORT KINETICS;

EID: 17644395997     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217979204026950     Document Type: Conference Paper

References (6)

1. For a recent review of high mobility Si/SiGe structures, see, for example, F. Schaffler, Semicond. Sci. Technol. 12, 1515 (1997).
2. The Quantum Hall Effect, edited by R.E. Prange and S.M. Girvin (Springer-Verlag, New York, 1990).
3. Perspectives in Quantum Hall Effects, edited by S. Das Sarma and A. Pinczuk (Wiley, New York, 1996).
4. K. Ismail, Physica B 227, 310 (1996).
5. K. Lai et al., cond-mat 0405455
6. F.F. Fang and P.J. Stiles, Phys. Rev. 174, 823 (1968).